OBSOLETE - PLEASE USE ZXMN3AMCTA
ZXMN3AM832
TYPICAL CHARACTERISTICS
300
10
250
V GS = 0V
f = 1MHz
8
I D = 2.5A
200
150
C ISS
C OSS
6
100
50
C RSS
4
2
V DS = 15V
0
0.1
1
10
0
0
1
2
3
4
V DS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
6
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
ISSUE 1 - OCTOBER 2005
相关PDF资料
ZXMN3AMCTA MOSFET 2N-CH 30V 2.9A DFN
ZXMN3B01FTA MOSFET N-CHAN 30V 2A SOT23-3
ZXMN3B04N8TC MOSFET N-CHAN 30V 8SOIC
ZXMN3B14FTA MOSFET N-CHAN 30V 3.5A SOT23-3
ZXMN3F30FHTA MOSFET N-CHAN 30V SOT23-3
ZXMN3F31DN8TA MOSFET N-CHAN 30V 8SOIC DUAL
ZXMN3G32DN8TA MOSFET N-CHAN 30V 8SOIC DUAL
ZXMN4A06GTA MOSFET N-CH 40V 5A SOT223
相关代理商/技术参数
ZXMN3AM832TC 制造商:ZETEX 制造商全称:ZETEX 功能描述:MPPS Miniature Package Power Solutions DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3AMC 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3AMCTA 功能描述:MOSFET 30V DUAL N-CH ENH 20V VGS 3.7 IDS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN3B01F 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
ZXMN3B01FTA 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN3B01FTC 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
ZXMN3B04N8 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
ZXMN3B04N8TA 功能描述:MOSFET 30V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube